? semiconductor components industries, llc, 2012 august, 2012 ? rev. 0 1 publication order number: nsi50150ad/d NSI50150ADT4G adjustable constant current regulator & led driver 50 v, 150 ? 350 ma 10%, 4.2 w package the adjustable constant current regulator (ccr) is a simple, economical and robust device designed to provide a cost effective solution for regulating current in leds. the ccr is based on self-biased transistor (sbt) technology and regulates current over a wide voltage range. it is designed with a negative temperature coefficient to protect leds from thermal runaway at extreme voltages and currents. the ccr turns on immediately and is at 14% of regulation with only 0.5 v vak. the r adj pin allows i reg(ss) to be adjusted to higher currents by attaching a resistor between r adj (pin 3) and the cathode (pin 4). the r adj pin can also be left open (no connect) if no adjustment is required. it requires no external components allowing it to be designed as a high or low ? side regulator. the high anode- cathode voltage rating withstands surges common in automotive, industrial and commercial signage applications. this device is available in a thermally robust package and is qualified to stringent aec ? q101 standard, which is lead-free rohs compliant and uses halogen-free molding compound. features ? robust power package: 4.2 watts ? adjustable up to 350 ma ? wide operating voltage range ? immediate turn-on ? voltage surge suppressing ? protecting leds ? sbt (self ? biased transistor) technology ? negative temperature coefficient ? eliminates additional regulation ? for automotive and other applications requiring unique site and control change requirements; aec ? q101 qualified and ppap capable, ul94 ? v0 certified ? these devices are pb ? free, halogen free/bfr free and are rohs compliant applications ? automobile: chevron side mirror markers, cluster, display & instrument backlighting, chmsl, map light ? ac lighting panels, display signage, decorative lighting, channel lettering ? application notes and8391/d, and9008/d ? power dissipation considerations ? application note and8349/d ? automotive chmsl http://onsemi.com dpak case 369c marking diagram device package shipping ? ordering information NSI50150ADT4G dpak (pb ? free) 2500/tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our t ape and reel packaging specifications brochure, brd8011/d. anode 1 4 cathode i reg(ss) = 150 ? 350 ma @ vak = 7.5 v 3 r adj 1 2 3 4 1 y = year ww = work week nsi150 = specific device code g = pb ? free package c a r adj yww nsi 150g
NSI50150ADT4G http://onsemi.com 2 maximum ratings (t a = 25 c unless otherwise noted) rating symbol value unit anode ? cathode voltage vak max 50 v reverse voltage v r 500 mv operating and storage junction temperature range t j , t stg ? 55 to +175 c esd rating: human body model machine model esd class 3b (8000 v) class c (400 v) stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit steady state current @ vak = 7.5 v (note 1) i reg(ss) 135 150 165 ma voltage overhead (note 2) v overhead 1.8 v pulse current @ vak = 7.5 v (note 3) i reg(p) 140.5 158 175.35 ma 1. i reg(ss) steady state is the voltage (vak) applied for a time duration 170 sec, using fr ? 4 @ 1000 mm 2 2 oz. copper traces, in still air. 2. v overhead = v in ? v leds . v overhead is typical value for 48% i reg(ss) . 3. i reg(p) non ? repetitive pulse test. pulse width t 1 msec.
NSI50150ADT4G http://onsemi.com 3 thermal characteristics characteristic symbol max unit total device dissipation (note 4) t a = 25 c derate above 25 c p d 2125 14.16 mw mw/ c thermal resistance, junction ? to ? ambient (note 4) r ja 70.6 c/w thermal resistance, junction ? to ? tab (note 4) r j ? tab 6.8 c/w total device dissipation (note 5) t a = 25 c derate above 25 c p d 2500 16.67 mw mw/ c thermal resistance, junction ? to ? ambient (note 5) r ja 60 c/w thermal resistance, junction ? to ? tab (note 5) r j ? tab 6.3 c/w total device dissipation (note 6) t a = 25 c derate above 25 c p d 2496 16.64 mw mw/ c thermal resistance, junction ? to ? ambient (note 6) r ja 60.1 c/w thermal resistance, junction ? to ? tab (note 6) r j ? tab 6.5 c/w total device dissipation (note 7) t a = 25 c derate above 25 c p d 2930 19.53 mw mw/ c thermal resistance, junction ? to ? ambient (note 7) r ja 51.2 c/w thermal resistance, junction ? to ? tab (note 7) r j ? tab 5.9 c/w total device dissipation (note 8) t a = 25 c derate above 25 c p d 2771 18.47 mw mw/ c thermal resistance, junction ? to ? ambient (note 8) r ja 54.1 c/w thermal resistance, junction ? to ? tab (note 8) r j ? tab 6.2 c/w total device dissipation (note 9) t a = 25 c derate above 25 c p d 3256 21.71 mw mw/ c thermal resistance, junction ? to ? ambient (note 9) r ja 46.1 c/w thermal resistance, junction ? to ? tab (note 9) r j ? tab 5.7 c/w total device dissipation (note 10) t a = 25 c derate above 25 c p d 4202 28.01 mw mw/ c thermal resistance, junction ? to ? ambient (note 10) r ja 35.7 c/w thermal resistance, junction ? to ? tab (note 10) r j ? tab 5.4 c/w total device dissipation (note 11) t a = 25 c derate above 25 c p d 4144 27.62 mw mw/ c thermal resistance, junction ? to ? ambient (note 11) r ja 36.2 c/w thermal resistance, junction ? to ? tab (note 11) r j ? tab 1.0 c/w junction and storage temperature range t j , t stg ? 55 to +150 c 4. fr ? 4 @ 300 mm 2 , 1 oz. copper traces, still air. 5. fr ? 4 @ 300 mm 2 , 2 oz. copper traces, still air. 6. fr ? 4 @ 500 mm 2 , 1 oz. copper traces, still air. 7. fr ? 4 @ 500 mm 2 , 2 oz. copper traces, still air. 8. fr ? 4 @ 700 mm 2 , 1 oz. copper traces, still air. 9. fr ? 4 @ 700 mm 2 , 2 oz. copper traces, still air. 10. fr ? 4 @ 1000 mm 2 , 3 oz. copper traces, still air. 11. 400 mm 2 , denka k1, 1.5 mm al, 2 kv thermally conductive dielectric, 2 oz. cu, or equivalent.
NSI50150ADT4G http://onsemi.com 4 typical performance curves (minimum fr ? 4 @ 1000 mm 2 , 3 oz. copper trace, still air) figure 1. general performance curve for ccr figure 2. steady state current (i reg(ss) ) vs. anode ? cathode voltage (vak) figure 3. pulse current (i reg(p) ) vs. anode ? cathode voltage (vak) figure 4. steady state current vs. pulse current testing vak, anode ? cathode voltage (v) i reg(p) , pulse current (ma) i reg(p) , pulse current (ma) i reg(ss) , steady state current (ma) figure 5. current regulation vs. time figure 6. i reg(ss) vs. r adj vak, anode ? cathode voltage (v) 40 30 20 10 0 ? 10 ? 25 i reg , current regulation (ma) t a = 25 c, r adj = open 50 vak, anode ? cathode voltage (v) i reg(ss) , steady state current (ma) dc test steady state, still air, r adj = open time (s) i reg , current regulation (ma) r adj ( ), max power 1 w 10 1 150 200 i reg(ss) , steady state current (ma) 100 250 300 1000 150 60 350 vak @ 7.5 v t a = 25 c r adj = open vak @ 7.5 v t a = 25 c non ? repetitive pulse test t a = 25 c r adj = open 200 80 40 0 120 148 149 vak @ 7.5 v t a = 25 c r adj = open 150 151 152 153 154 155 156 180 60 20 100 140 9 6 5 4 3 20 60 80 100 710 8 40 t a = 25 c 2 1 0 120 180 140 0 160 11 12 13 14 15 t a = 85 c t a = ? 40 c t a = 125 c t j , maximum die temperature limit 175 c ? 0.118 ma/ c typ ? 0.153 ma/ c typ ? 0.174 ma/ c typ 10 9 8 7 6 5 4 40 80 100 60 3 120 140 160 180 2 11112131415 180 170 130 135 140 145 150 155 160 140 160 165 170 150 175 145 165 155 0 25 50 75 100 125 175 200 160
NSI50150ADT4G http://onsemi.com 5 300 mm 2 2 oz cu figure 7. dpak thermal power dissipation vs. ambient temperature @ t j = 175 c t a , ambient temperature ( c) p d , power dissipation (mw) 1200 1500 1800 2100 2400 2700 3000 3300 3600 3900 4200 4500 4800 5100 5400 5700 6000 ? 40 ? 200 20406080 700 mm 2 2 oz 500 mm 2 2 oz cu 500 mm 2 1 oz cu 300 mm 2 1 oz cu 700 mm 2 1 oz cu 1000 mm 2 3 oz cu 400 mm 2 mcpcb
NSI50150ADT4G http://onsemi.com 6 applications information the ccr is a self biased transistor designed to regulate the current through itself and any devices in series with it. the device has a slight negative temperature coefficient, as shown in figure 2 ? tri temp. (i.e. if the temperature increases the current will decrease). this negative temperature coefficient will protect the leds by reducing the current as temperature rises. the ccr turns on immediately and is typically at 20% of regulation with only 0.5 v across it. the device is capable of handling voltage for short durations of up to 50 v so long as the die temperature does not exceed 175 c. the determination will depend on the thermal pad it is mounted on, the ambient temperature, the pulse duration, pulse shape and repetition. single led string the ccr can be placed in series with leds as a high side or a low side driver. the number of the leds can vary from one to an unlimited number. the designer needs to calculate the maximum voltage across the ccr by taking the maximum input voltage less the voltage across the led string (figures 8 and 9). figure 8. figure 9. higher current led strings two or more fixed current ccrs can be connected in parallel. the current through them is additive (figure 10). figure 10.
NSI50150ADT4G http://onsemi.com 7 other currents the adjustable ccr can be placed in parallel with any other ccr to obtain a desired current. the adjustable ccr provides the ability to adjust the current as led efficiency increases to obtain the same light output (figure 11). figure 11. dimming using pwm the dimming of an led string can be easily achieved by placing a bjt in series with the ccr (figure 12). figure 12. the method of pulsing the current through the leds is known as pulse width modulation (pwm) and has become the preferred method of changing the light level. leds being a silicon device, turn on and off rapidly in response to the current through them being turned on and off. the switching time is in the order of 100 nanoseconds, this equates to a maximum frequency of 10 mhz, and applications will typically operate from a 100 hz to 100 khz. below 100 hz the human eye will detect a flicker from the light emitted from the leds. between 500 hz and 20 khz the circuit may generate audible sound. dimming is achieved by turning the leds on and off for a portion of a single cycle. this on/off cycle is called the duty cycle (d) and is expressed by the amount of time the leds are on (ton) divided by the total time of an on/off cycle (ts) (figure 13). figure 13. the current through the leds is constant during the period they are turned on resulting in the light being consistent with no shift in chromaticity (color). the brightness is in proportion to the percentage of time that the leds are turned on. figure 14 is a typical response of luminance vs duty cycle. figure 14. luminous emmitance vs. duty cycle duty cycle (%) 100 90 80 70 60 50 40 0 1000 3000 illuminance (lx) 2000 30 4000 6000 20 10 0 5000 lux linear reducing emi designers creating circuits switching medium to high currents need to be concerned about electromagnetic interference (emi). the leds and the ccr switch extremely fast, less than 100 nanoseconds. to help eliminate emi, a capacitor can be added to the circuit across r2. (figure 12) this will cause the slope on the rising and falling edge on the current through the circuit to be extended. the slope of the ccr on/off current can be controlled by the values of r1 and c1. the selected delay / slope will impact the frequency that is selected to operate the dimming circuit. the longer the delay, the lower the frequency will be. the delay time should not be less than a 10:1 ratio of the minimum on time. the frequency is also impacted by the resolution and dimming steps that are required. with a delay of 1.5 microseconds on the rise and the fall edges, the minimum on time would be 30 microseconds. if the design called for a resolution of 100 dimming steps, then a total duty cycle time (ts) of 3 milliseconds or a frequency of 333 hz will be required.
NSI50150ADT4G http://onsemi.com 8 thermal considerations as power in the ccr increases, it might become necessary to provide some thermal relief. the maximum power dissipation supported by the device is dependent upon board design and layout. mounting pad configuration on the pcb, the board material, and the ambient temperature affect the rate of junction temperature rise for the part. when the device has good thermal conductivity through the pcb, the junction temperature will be relatively low with high power applications. the maximum dissipation the device can handle is given by: p d(max) t j(max) t a r ja referring to the thermal table on page 2 the appropriate r ja for the circuit board can be selected. ac applications the ccr is a dc device; however, it can be used with full wave rectified ac as shown in application notes and8433/d and and8492/d and design notes dn05013/d and dn06065/d. figure 15 shows the basic circuit configuration. figure 15. basic ac application
NSI50150ADT4G http://onsemi.com 9 package dimensions dpak (single gauge) case 369c issue d b d e b3 l3 l4 b2 e m 0.005 (0.13) c c2 a c c z dim min max min max millimeters inches d 0.235 0.245 5.97 6.22 e 0.250 0.265 6.35 6.73 a 0.086 0.094 2.18 2.38 b 0.025 0.035 0.63 0.89 c2 0.018 0.024 0.46 0.61 b2 0.030 0.045 0.76 1.14 c 0.018 0.024 0.46 0.61 e 0.090 bsc 2.29 bsc b3 0.180 0.215 4.57 5.46 l4 ??? 0.040 ??? 1.01 l 0.055 0.070 1.40 1.78 l3 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inches. 3. thermal pad contour optional within di- mensions b3, l3 and z. 4. dimensions d and e do not include mold flash, protrusions, or burrs. mold flash, protrusions, or gate burrs shall not exceed 0.006 inches per side. 5. dimensions d and e are determined at the outermost extremes of the plastic body. 6. datums a and b are determined at datum plane h. 12 3 4 5.80 0.228 2.58 0.102 1.60 0.063 6.20 0.244 3.00 0.118 6.17 0.243 mm inches scale 3:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h 0.370 0.410 9.40 10.41 a1 0.000 0.005 0.00 0.13 l1 0.108 ref 2.74 ref l2 0.020 bsc 0.51 bsc a1 h detail a seating plane a b c l1 l h l2 gauge plane detail a rotated 90 cw on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 nsi50150ad/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
|
